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(Color online) Type I-V curves of resistive switching behavior in the Ru/RE2O3/TaN devices using Nd2O3, Dy2O3, and Er2O3 thin films. Inset: The conducting mechanisms of (a) HRS and (b) LRS in the Ru/RE2O3/TaN devices.
(Color online) (a) Nd 3d, (b) Dy 4d, (c) Er 4d, and (d)-(e) O 1s XPS spectra of RE2O3 dielectric films deposited on TaN/SiO2/Si substrates.
(Color online) Schematic diagram of resistance switching mechanism in RE2O3 thin films for (a) conduction, (b) formation, and (c) rupture of filament. The pre-existing conduction filaments consist of metallic RE (RE0) and oxygen vacancies (VO 2+) in the RE2O3 film. The formation of the filaments is due to oxygen ions migration in RE-O bonds producing oxygen vacancy (VO 2+) and the reaction of two electrons with RE atoms forming metallic RE (RE0), causing RE0 atoms connected in a chain.
(Color online) (a) Retention characteristics of the Ru/RE2O3/TaN devices in both resistance states under a continuous 0.5 V readout voltage. (b) Resistance values of both HRS and LRS versus cycle numbers for Ru/RE2O3/TaN devices.
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