1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature
Rent:
Rent this article for
USD
10.1063/1.3638490
/content/aip/journal/apl/99/11/10.1063/1.3638490
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3638490
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Type I-V curves of resistive switching behavior in the Ru/RE2O3/TaN devices using Nd2O3, Dy2O3, and Er2O3 thin films. Inset: The conducting mechanisms of (a) HRS and (b) LRS in the Ru/RE2O3/TaN devices.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Nd 3d, (b) Dy 4d, (c) Er 4d, and (d)-(e) O 1s XPS spectra of RE2O3 dielectric films deposited on TaN/SiO2/Si substrates.

Image of FIG. 3.
FIG. 3.

(Color online) Schematic diagram of resistance switching mechanism in RE2O3 thin films for (a) conduction, (b) formation, and (c) rupture of filament. The pre-existing conduction filaments consist of metallic RE (RE0) and oxygen vacancies (VO 2+) in the RE2O3 film. The formation of the filaments is due to oxygen ions migration in RE-O bonds producing oxygen vacancy (VO 2+) and the reaction of two electrons with RE atoms forming metallic RE (RE0), causing RE0 atoms connected in a chain.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Retention characteristics of the Ru/RE2O3/TaN devices in both resistance states under a continuous 0.5 V readout voltage. (b) Resistance values of both HRS and LRS versus cycle numbers for Ru/RE2O3/TaN devices.

Loading

Article metrics loading...

/content/aip/journal/apl/99/11/10.1063/1.3638490
2011-09-13
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3638490
10.1063/1.3638490
SEARCH_EXPAND_ITEM