1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
Rent:
Rent this article for
USD
10.1063/1.3638492
/content/aip/journal/apl/99/11/10.1063/1.3638492
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3638492
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Transistor device structure. Shown in the picture is the structure of the buried channel device. For the surface channel device the 3 nm InP cap is removed during the recess.

Image of FIG. 2.
FIG. 2.

(Color online) C-V characteristics (collected at 15 frequencies swept logarithmically from 1 kHz to 1 MHz) of the surface channel (a,b) and the buried channel (c,d) devices with either HCl (a,c) or ASV (b,d) treatments prior to the gate oxide deposition.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Drive current (Ion) and (b) the peak transconductance (gm) as a function of the gate length for ASV and HCl treated surface channel and buried channel devices.

Image of FIG. 4.
FIG. 4.

(Color online) Drain current versus the gate voltage for the HCl and ASV treated surface channel (SC) and buried channel (BC) devices.

Image of FIG. 5.
FIG. 5.

(Color online) XPS spectrum of the In3d peak indicates the efficiency of ASV treatment in avoiding native oxide formation.

Loading

Article metrics loading...

/content/aip/journal/apl/99/11/10.1063/1.3638492
2011-09-15
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3638492
10.1063/1.3638492
SEARCH_EXPAND_ITEM