No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Cd diffusion and thermal stability of CdZnO/ZnO heterostructures
1. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301 (2005).
6. A. V. Thompson, C. Boutwell, J. W. Mares, W. V. Schoenfeld, A. Osinsky, B. Hertog, J. Q. Xie, S. J. Pearton, and D. P. Norton, Appl. Phys. Lett. 91, 201921 (2007).
13. W.-K. Chu, J. W. Mayer, and M.-A. Nicolet, Backscattering Spectrometry (Academic, New York, 1978).
14.More detailed Zn redistribution analysis is complicated by the lower scattering cross-section of Zn atoms as compared to that of Cd and a background signal originated from Zn atoms in CdZnO layers. However, note that overall heterostructure thickness remains unchanged in spite of a pronounced Cd evaporation at high temperatures likely on behalf of Zn in-diffusion, while the apparent signal shifts observed in the sample annealed at 900 °C is due to initially slightly thicker ZnO layer.
15.An apparent gradient in Cd profiles at the ZnO/Al2O3 interface is a result of the RBS limited depth resolution similar to that at the surface and the CdZnO/ZnO interface.
16.It should be mentioned that the calibration of Cd-related SIMS signal is reliable for the depth corresponding to ZnO spacer only, while that in CdO (≤150 nm in Fig. 3(a)) may be affected by uncertainties in ionization efficiencies in CdO and in the immediate vicinity of CdO/ZnO interface.
22. K. M. Johansen, A. Zubiaga, I. Makkonen, F. Tuomisto, P. T. Neuvonen, K. E. Knutsen, E. V. Monakhov, A. Y. Kuznetsov, and B. G. Svensson, Phys. Rev. B 83, 245208 (2011).
Article metrics loading...
Full text loading...
Most read this month