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SiNx charge-trap nonvolatile memory based on ZnO thin-film transistors
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10.1063/1.3640221
/content/aip/journal/apl/99/11/10.1063/1.3640221
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3640221
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Cross-sectional schematic diagram of the ZnO TFT-NVM device with the SiNX charge trap layer in the gate stack (a), cross-sectional TEM image of the ZnO channel and gate stack (b), and XRD patterns of the ZnO thin films (c). The inset is a high resolution cross-sectional TEM image of the ZnO channel.

Image of FIG. 2.
FIG. 2.

(Color online) XPS spectra of Zn 2p3/2 states (a) and O 1s states (b) including its Lorentz-resolved components in the ZnO thin films.

Image of FIG. 3.
FIG. 3.

(Color online) Transfer and output (inset) characteristics of the ZnO TFT-NVM device (a) and transfer curves as VD = 10 V (b).

Image of FIG. 4.
FIG. 4.

(Color online) Transfer characteristics of the ZnO TFT-NVM device after program and erase operations (a), threshold voltage shifts as a function of program time under different program voltages (b), threshold voltage shifts as a function of erase time under different erase voltages (c), and trapped charge retention characteristics after program and erase operations.

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/content/aip/journal/apl/99/11/10.1063/1.3640221
2011-09-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: SiNx charge-trap nonvolatile memory based on ZnO thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3640221
10.1063/1.3640221
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