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Magnetic field influence on the transient photoresistivity of defect-induced magnetic ZnO films
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10.1063/1.3640231
/content/aip/journal/apl/99/11/10.1063/1.3640231
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3640231
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Normalized Photocurrent of the magnetic sample 1 (100 nm thick) as a function of the incident light wave length at 30, 100, and 280 K. (b) The same measurements without (○) and under (•) a magnetic field of 0.8 T.

Image of FIG. 2.
FIG. 2.

Photoresistance (PR) of the magnetic sample 1 using 3.5 eV of incident light. The starting and times of the illumination are indicated by arrows. (a) Room temperature: without applied field (○) and under a magnetic field of 0.5 T (★) and 0.8 T (•). (b) PR at 15 K without (○) and under a magnetic field of 0.8 T (•).

Image of FIG. 3.
FIG. 3.

Photoresistance (PR) of the non-magnetic ZnO film (300 nm thick) measured under illumination of 3.5 eV of incident light at 280 K without (○) and under a field of 0.8 T (•).

Image of FIG. 4.
FIG. 4.

Cycles of transient photoresistance of the magnetic sample 2 (300 nm thick) turning on and off the UV light monitoring the resistance between 1.2 and 2.2 MΩ. (○): without applied field and (•) with a magnetic field of 0.5 T. Between the two cycles the sample was kept 24 h in dark.

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/content/aip/journal/apl/99/11/10.1063/1.3640231
2011-09-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetic field influence on the transient photoresistivity of defect-induced magnetic ZnO films
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3640231
10.1063/1.3640231
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