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Electron scattering in Ge metal-oxide-semiconductor field-effect transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) The schematic diagram of scattering process for Δ, L, and Γ valleys. (b) The μPHS as a function of Eeff for Si and Ge.

Image of FIG. 2.
FIG. 2.

(Color online) (a) The TEM image of the Ge/GeO2/Al2O3 gate stack. (b) The unscreened potentials of two interface charges at GeO2/Al2O3 interface and at Ge/GeO2 interface. The squared envelop function is also shown.

Image of FIG. 3.
FIG. 3.

(Color online) Ge electron mobility for two different GeO2 thicknesses as a function of Eeff with fitting curves. The value of Nit = 4 × 1011 cm−2 and Nit = 1.5 × 1011 cm−2 used to fit the μeff of the GeO2 thickness of ∼6.9 nm and ∼8.4 nm, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) The experimental and theoretical mobility vs. Eeff. The same parameters of Δm = 0.32 nm and Λ = 1 nm used for the Si μeff (dot line) and Ge μeff (dash-dot line) in consistent with the previous Ge simulation (dashed line) in Ref. 2. The larger parameters of Δm = 0.54 nm and Λ = 1.2 nm are extracted from Ge mobility to obtain the best fit of the experimental data.

Image of FIG. 5.
FIG. 5.

(Color online) The μPHS and μIRS as a function of Eeff for Ge and Si. Ge has a lower effective electrical field than Si at cross-over point.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron scattering in Ge metal-oxide-semiconductor field-effect transistors