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High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition
6. R. K. Wong, M.S. thesis, Department of Materials Science and Mineral Engineering, University of California, Berkeley, 2000.
8. A. Uskov, O. Kovalenkov, V. Ivantsov, V. Sukhoveev, V. Dmitriev, N. Shmidt, D. Poloskin, V. Petrov, and V. Ratnikov, Mater. Res. Soc. Symp. Proc. 831, E8–25 (2005).
12. A. Khan and K. Balakrishnan, Mater. Sci. Forum 490, 41 (2008).
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A method of alternative co-doping in metal organic chemical deposition was used to realize high hole carrier concentrations of about 6 × 1018/cm3 in AlxGa1−xN (x = 0.4) and 2 × 1019/cm3 for GaN at room temperature. This technique opens up a new avenue for fabricating electronic p-channel devices, such as p-channel high electron mobility transistor, and vertical current flow type devices, such as deep ultra violet light emitting diodes.
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