1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
oa
High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/99/11/10.1063/1.3641476
1.
1. M. A. L. Johnaon, Z. Yu, C. Boney, W. C. Hughes, J. W. Cook, J. F. Schetzina, and H. Zhao, Mater. Res. Soc. Symp. Proc. 449, 215 (1997).
http://dx.doi.org/10.1557/PROC-449-215
2.
2. J. W. Orton and T. Foxon, Rep. Prog. Phys. 61, 1 (1998).
http://dx.doi.org/10.1088/0034-4885/61/1/001
3.
3. W. Gotz, N. M. Johnson, J. Walker, D. P. Bour, and R. A. Street, Appl. Phys. Lett. 68, 667 (1996).
http://dx.doi.org/10.1063/1.116503
4.
4. S. Fischer, C. Wetzel, E. E. Haller, and B. K. Meyer, Appl. Phys. Lett. 67, 1298 (1995).
http://dx.doi.org/10.1063/1.114403
5.
5. J. Li, T. N. Oder, M. L. Nakami, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 80, 1210 (2002).
http://dx.doi.org/10.1063/1.1450038
6.
6. R. K. Wong, M.S. thesis, Department of Materials Science and Mineral Engineering, University of California, Berkeley, 2000.
7.
7. T. Nanjo, M. Takeuchi, M. Sita, T. Oishi, Y. Yokuda, and Y. Aoyagi, Appl. Phys. Express 1, 011101 (2008).
http://dx.doi.org/10.1143/APEX.1.011101
8.
8. A. Uskov, O. Kovalenkov, V. Ivantsov, V. Sukhoveev, V. Dmitriev, N. Shmidt, D. Poloskin, V. Petrov, and V. Ratnikov, Mater. Res. Soc. Symp. Proc. 831, E825 (2005).
9.
9. H. Yu, E. Ulker, and E. Ozbay, J. Cryst. Growth 289, 419 (2006).
http://dx.doi.org/10.1016/j.jcrysgro.2005.11.109
10.
10. H. Hirayama, N. Noguchi, S. Fujikawa, J. Norimatsu, N. Kamata, T. Takano, and K. Tsubaki, Proc. SPIE 7216, 721621 (2009).
http://dx.doi.org/10.1117/12.809729
11.
11. H. Yu, W. Strupinski, S. Butun, and E. Ozbay, Phys. Status Solidi A 203, 868 (2006).
http://dx.doi.org/10.1002/pssa.200521461
12.
12. A. Khan and K. Balakrishnan, Mater. Sci. Forum 490, 41 (2008).
13.
13. H. Katayama-Yoshida and T. Yamamoto, Phys. Status Solidi 202, 763 (1997).
http://dx.doi.org/10.1002/1521-3951(199708)202:2<>1.0.CO;2-T
14.
14. X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, and S. J. Rosner, Appl. Phys. Lett. 72, 692 (1998).
http://dx.doi.org/10.1063/1.120844
15.
15. Y. L. Chang, M. Ludowise, D. Lewfforge, and B. Perez, Appl. Phys. Lett. 74, 688 (1999).
http://dx.doi.org/10.1063/1.122988
16.
16. H. K. Cho, J. Y. Lee, S. R. Jeon, and G. M. Yang, Appl. Phys. Lett. 79, 3788 (2001).
http://dx.doi.org/10.1063/1.1424471
17.
17. H. Xing, D. S. Green, H. Yu, T. Mates, P. Kozodoy, S. Keller, D. P. Dembaars, and U. Mishira, Jpn. J. Appl. Phys. 42, 50 (2003).
http://dx.doi.org/10.1143/JJAP.42.50
18.
18. K. Harafuji, T. Tsuchiya, and K. Kawamura, Jpn. J. Appl. Phys. 43, 522 (2004).
http://dx.doi.org/10.1143/JJAP.43.522
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3641476
Loading
/content/aip/journal/apl/99/11/10.1063/1.3641476
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/99/11/10.1063/1.3641476
2011-09-15
2014-12-21

Abstract

A method of alternative co-doping in metal organic chemical deposition was used to realize high hole carrier concentrations of about 6 × 1018/cm3 in AlxGa1−xN (x = 0.4) and 2 × 1019/cm3 for GaN at room temperature. This technique opens up a new avenue for fabricating electronic p-channel devices, such as p-channel high electron mobility transistor, and vertical current flow type devices, such as deep ultra violet light emitting diodes.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/99/11/1.3641476.html;jsessionid=p9cq43bjims8.x-aip-live-06?itemId=/content/aip/journal/apl/99/11/10.1063/1.3641476&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3641476
10.1063/1.3641476
SEARCH_EXPAND_ITEM