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Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells
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10.1063/1.3640492
/content/aip/journal/apl/99/12/10.1063/1.3640492
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/12/10.1063/1.3640492
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) The quantum well potential for (a) a typical GaN based quantum well with an internal PEF, (b) a GaN based well with an internal PEF with an image charge field, and (c) a well with no PEF and applied image charge potential.

Image of FIG. 2.
FIG. 2.

(Color online) Left: schematic of quantum wells used; the InGaN well layer is varied in width between 4.05 nm and 4.55 nm. Center: a typical AFM image of gold covered sample. Right: a typical AFM image of quantum well sample without metal layer.

Image of FIG. 3.
FIG. 3.

(Color online) PL spectra for 4.55 nm, 4.30 nm, and 4.05 nm SQWs (black solid) and gold film covered SQWs (dotted), labeled above.

Image of FIG. 4.
FIG. 4.

(Color online) Simulation of energy shift in InGaN QW versus well width resulting from adding an image charge field by adding a none uniform metal layer on the well cap. The electron energy (square) decreases since its well becomes more triangular and the hole energy (triangle) increases as its well becomes more flat. The effective sum of the electron and hole energy shift (solid line) shift is observed in PL and drawn as a black solid line. The widths of the QWs used in experiment are marked with green vertical lines intersecting the line simulating the observed energy shift.

Image of FIG. 5.
FIG. 5.

Simulation of energy shift in InGaN QW versus PEF resulting from adding an image charge field induced by a non-uniform metal layer on the well cap for a 4.30 nm SQW. The electron energy (square) decreases since its well becomes more triangular (triangle) and the hole energy (triangle) increases as its well becomes more flat. The effective sum of the electron and hole energy (solid line) shift is observed in PL and drawn as a black solid line.

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/content/aip/journal/apl/99/12/10.1063/1.3640492
2011-09-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/12/10.1063/1.3640492
10.1063/1.3640492
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