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Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc
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10.1063/1.3641417
/content/aip/journal/apl/99/12/10.1063/1.3641417
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/12/10.1063/1.3641417

Figures

Image of FIG. 1.
FIG. 1.

Relationship between the reflectivity and temperature of the as-deposited Si/CuSi bilayer at heating rate of 20 °C/min.

Image of FIG. 2.
FIG. 2.

TEM bright field images and electron diffraction patterns of the (a)as-deposited, (b) 270 °C annealed, (c) 500 °C annealed Si/CuSi bilayer films, and (d) the SAED pattern of larger grain marked by an arrow in Fig.3(c).

Image of FIG. 3.
FIG. 3.

Jitter values and modulations as a function of writing power at the 1× and 4× recording speeds.

Tables

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Table I.

Dynamic test conditions.

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/content/aip/journal/apl/99/12/10.1063/1.3641417
2011-09-22
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/12/10.1063/1.3641417
10.1063/1.3641417
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