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Relationship between the reflectivity and temperature of the as-deposited Si/CuSi bilayer at heating rate of 20 °C/min.
TEM bright field images and electron diffraction patterns of the (a)as-deposited, (b) 270 °C annealed, (c) 500 °C annealed Si/CuSi bilayer films, and (d) the SAED pattern of larger grain marked by an arrow in Fig.3(c).
Jitter values and modulations as a function of writing power at the 1× and 4× recording speeds.
Dynamic test conditions.
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