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Natural band alignments of InN/GaN/AlN nanorod heterojunctions
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10.1063/1.3641422
/content/aip/journal/apl/99/12/10.1063/1.3641422
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/12/10.1063/1.3641422
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM images of the vertically aligned InN/GaN/AlN triple-heterojunction nanorod array. (a) Cross-sectional view and (b) plan view of the triple-heterojunction nanorod array.

Image of FIG. 2.
FIG. 2.

X-ray diffraction profile of the vertically aligned InN/GaN/AlN triple-heterojunction nanorod array. The inset shows the enlarged diffraction peak of AlN(0002).

Image of FIG. 3.
FIG. 3.

(Color online) μ-PES spectra of (a) Ga 3d and Al 2p core levels at the GaN/AlN interface and (b) In 4d and Ga 3d core levels at the InN/GaN interface in the InN/GaN/AlN triple-heterojunction nanorod array.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic of natural band alignments for InN, GaN, and AlN. The corresponding values of (E CL – EV ) and ΔE CL are shown in the graph. The determined VBOs for InN/GaN, GaN/AlN, and InN/AlN heterojunctions are 0.8 ± 0.1 eV, 0.6 ± 0.1 eV, and 1.4 ± 0.1 eV, respectively.

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/content/aip/journal/apl/99/12/10.1063/1.3641422
2011-09-19
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Natural band alignments of InN/GaN/AlN nanorod heterojunctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/12/10.1063/1.3641422
10.1063/1.3641422
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