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Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics
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10.1063/1.3643139
/content/aip/journal/apl/99/12/10.1063/1.3643139
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/12/10.1063/1.3643139

Figures

Image of FIG. 1.
FIG. 1.

Photoemission measurement curves for the circular AlGaN/AlN/GaN diode (a) and the rectangular one (b).

Image of FIG. 2.
FIG. 2.

The measured C-V curves for the circular AlGaN/AlN/GaN diode (a) and the rectangular one (b).

Image of FIG. 3.
FIG. 3.

The measured forward I−V curves for the circular AlGaN/AlN/GaN diode (a) and the rectangular one (b).

Image of FIG. 4.
FIG. 4.

Conduction band diagram of the AlGaN/AlN/GaN heterostructure at zero bias (a) and under flat-band voltage (b).

Tables

Generic image for table
Table I.

The calculated and measured parameters for the circular and rectangular AlGaN/AlN/GaN diodes.

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/content/aip/journal/apl/99/12/10.1063/1.3643139
2011-09-22
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/12/10.1063/1.3643139
10.1063/1.3643139
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