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Characterization of channel strain evolution upon the silicidation of recessed source/drain Si1−xGex structures
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10.1063/1.3633346
/content/aip/journal/apl/99/13/10.1063/1.3633346
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3633346
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) XRD curves of Ni germanosilicide on Si0.82Ge0.18 silicided at various temperatures (500, 660, and 780 °C) and (b) a bright-field transmission electron micrograph of the 500 °C-silicided sample.

Image of FIG. 2.
FIG. 2.

Bright-field transmission electron micrographs of Si0.82Ge0.18 S/D structures silicided with a Ni film of various thicknesses (a) 5 nm, (b) 10 nm, and (c) 20 nm.

Image of FIG. 3.
FIG. 3.

High resolution transmission electron micrographs (a) and Ge distributions (b) obtained from the three regions of the 10 nm sample indicated by the small boxes in Fig. 2(b). The EDS data were taken from the regions denoted by the white squares in the images.

Image of FIG. 4.
FIG. 4.

(Color online) Strain distributions of the samples with as-grown SiGe and silicided with Ni films of various thicknesses (5, 10, and 20 nm) obtained from NBD analysis. The NBD patterns were taken along the channel, as indicated by the white marks in the bright-field image (a). (b).

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/content/aip/journal/apl/99/13/10.1063/1.3633346
2011-09-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of channel strain evolution upon the silicidation of recessed source/drain Si1−xGex structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3633346
10.1063/1.3633346
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