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Nano epitaxial growth of GaAs on Si (001)
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10.1063/1.3640226
/content/aip/journal/apl/99/13/10.1063/1.3640226
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3640226
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-section TEM of the GaAs in period nanopatterned trenches with the aspect ratio of 5. The dislocation interruption is marked with dashed line and the dislocation free region is marked with rectangle. (b) Schematic diagram of GaAs on patterned trench.

Image of FIG. 2.
FIG. 2.

(a) Cross-section TEM of the GaAs grown in nanopatterned trench with an aspect ratio of 5. The dislocation interruption is marked with dashed line, and the dislocation free region is marked with rectangle. (b) TEM diffraction pattern of the location for GaAs epilayer in dislocation free region. (c) Cross-section TEM of GaAs on planar Si (001) and the occurrence of dislocation are marked with arrows.

Image of FIG. 3.
FIG. 3.

Plan-view TEM image of GaAs on the trench with an aspect ratio of5.

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/content/aip/journal/apl/99/13/10.1063/1.3640226
2011-09-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nano epitaxial growth of GaAs on Si (001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3640226
10.1063/1.3640226
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