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(Color online) Density plots of the calculated Coulomb scattering rates in dependence of the QW electron density we and the plasma temperature T for fixed ratio wh /we = 1.5. The assumed temperature characteristic of the device is shown by the white curves. Black dots mark the initial steady states used in the pump-probe simulations. [(a) and (b)]: Electron in-scattering rates for direct capture processes to the QD GS and ES, respectively. [(c) and (d)]: Electron relaxation rates for processes involving one intradot transition accompanied by a carrier transition within the QW or two QD-QW transitions, respectively. [(e) and (f)]: Hole in-scattering rates for direct capture processes to the QD GS and ES, respectively. [(g) and (h)]: Same as (c) and (d) for holes. The color code is in units of ps −1. The insets show schematically (i) direct electron capture processes, (ii) electron relaxation processes. Parameters see Table I.
(Color online) (a): Measured (exp) and simulated (sim) gain recovery dynamics for a single injected pump pulse and injection currents of j = 8 j 0 (red “o” symbols and solid curve), j = 11 j 0 (green “x” symbols and dashed line), j = 15 j 0 (blue “Δ” symbols and dash-dotted curve) (b): Gain recovery dynamics for two injected pump pulses with a spacing of Δt = 1 ps (T = 325 K and T = 401 K correspond to the initial temperatures). (c): Gain recovery dynamics for four injected pump pulses with a spacing of Δt = 1 ps.
(Color online) (a): Calculated average electron populations in the QD ground state (red solid curve) and excited state (red dashed curve) and QW (black dashed curve) vs time for an injection current density j = 8 j 0 in the presence of the pump pulse only. (b) Same as (a) for hole populations.
Numerical parameters used in the simulation other than in Ref. 12.
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