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(Color online) RHEED patterns: (a) before growth, (b) after deposition of the first two atomic layers La2O3, and (c) at the end of the growth process (2.5 nm) according  and  azimuths.
(Color online) Cross-sectional HRTEM morphology of La2O3 thin film epitaxial growth directly on InP (001) surface at 600 °C. The corresponding FFT patterns (top right) obtained from La2O3/InP rectangular regions in the micrograph.
(Color online) Electrical properties of the capacitor with W/2.5 nm-La2O3/InP/Al stack. (Capacitors are circular with 0.1 mm in diameter.) (a) C-V characteristics tested at 1 MHz and (b) I-V characteristics measured at gate voltage from −3 V to 3 V (−12 MV/cm to 12 MV/cm). The lower right inset in (b) depicts the structure of the capacitor.
(Color online) (a) Valence band spectra for 10 nm thick La2O3/InP structures and the bare InP substrate after Ar+ etching and (b) energy band diagram for La2O3/InP structure.
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