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Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates
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10.1063/1.3643470
/content/aip/journal/apl/99/13/10.1063/1.3643470
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3643470
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) RHEED patterns: (a) before growth, (b) after deposition of the first two atomic layers La2O3, and (c) at the end of the growth process (2.5 nm) according [001] and [012] azimuths.

Image of FIG. 2.
FIG. 2.

(Color online) Cross-sectional HRTEM morphology of La2O3 thin film epitaxial growth directly on InP (001) surface at 600 °C. The corresponding FFT patterns (top right) obtained from La2O3/InP rectangular regions in the micrograph.

Image of FIG. 3.
FIG. 3.

(Color online) Electrical properties of the capacitor with W/2.5 nm-La2O3/InP/Al stack. (Capacitors are circular with 0.1 mm in diameter.) (a) C-V characteristics tested at 1 MHz and (b) I-V characteristics measured at gate voltage from −3 V to 3 V (−12 MV/cm to 12 MV/cm). The lower right inset in (b) depicts the structure of the capacitor.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Valence band spectra for 10 nm thick La2O3/InP structures and the bare InP substrate after Ar+ etching and (b) energy band diagram for La2O3/InP structure.

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/content/aip/journal/apl/99/13/10.1063/1.3643470
2011-09-27
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3643470
10.1063/1.3643470
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