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(Color online) Depth profiles of La, Al, Hf, and N in the TiN/LaN/AlN/HfSiOx/Si MOS stack obtained by XPS at a sputtering rate of 0.98 nm/min: (a) As-deposited sample and (b) Annealed sample.
(Color online) XPS spectra of Al2p core energy level: (a) and (b) Al near TiN and in the dielectrics of the as-deposited sample, respectively. (c) and (d) Al near TiN and in the dielectrics of the annealed sample, respectively.
(Color online) (a) and (c) XPS spectra of the as-deposited and annealed samples at different depths with the high-k layer and interlayer between the high-k and Si denoted, respectively. (b) and (d) fitted spectra in the high-k layer of the as-deposited and annealed samples. (e) N1s spectra obtained from the as-deposited and annealed samples.
(Color online) (a) Forward-and-reverse C-V curves acquired from the pre-annealed and annealed samples, (b) Diagram of the dipole distribution in the MOS stack for the annealed sample, and (c) Diagram of the band alignment modulated by the Al-O dipole.
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