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Diffusion behavior of dual capping layers in TiN/LaN/AlN/HfSiOx/Si stack
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10.1063/1.3643517
/content/aip/journal/apl/99/13/10.1063/1.3643517
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3643517
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Depth profiles of La, Al, Hf, and N in the TiN/LaN/AlN/HfSiOx/Si MOS stack obtained by XPS at a sputtering rate of 0.98 nm/min: (a) As-deposited sample and (b) Annealed sample.

Image of FIG. 2.
FIG. 2.

(Color online) XPS spectra of Al2p core energy level: (a) and (b) Al near TiN and in the dielectrics of the as-deposited sample, respectively. (c) and (d) Al near TiN and in the dielectrics of the annealed sample, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) (a) and (c) XPS spectra of the as-deposited and annealed samples at different depths with the high-k layer and interlayer between the high-k and Si denoted, respectively. (b) and (d) fitted spectra in the high-k layer of the as-deposited and annealed samples. (e) N1s spectra obtained from the as-deposited and annealed samples.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Forward-and-reverse C-V curves acquired from the pre-annealed and annealed samples, (b) Diagram of the dipole distribution in the MOS stack for the annealed sample, and (c) Diagram of the band alignment modulated by the Al-O dipole.

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/content/aip/journal/apl/99/13/10.1063/1.3643517
2011-09-30
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Diffusion behavior of dual capping layers in TiN/LaN/AlN/HfSiOx/Si stack
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3643517
10.1063/1.3643517
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