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(Color online) The schematic structures of (a) an in-plane pressure sensor and (b) a tunneling pressure sensor. The corresponding atomic structures of (c) the in-plane sensor and (d) the tunneling sensor (without external pressure applied). (e) Top view of BN/graphene/BN system used for the transport calculation of the in-plane pressure sensor, where the left and right electrodes are indicated in shadow regions and the central part is the scatting region. (f) Top view of multilayer h-BN sandwiched by multilayer graphene, where the dashed red lines represent the super-cell box for the electronic transport calculation of the tunneling pressure sensor.
(Color online) Transmission spectra of (a) the in-plane sensor and (b) the tunneling sensor as functions of electron energy with different external pressure. As external pressure increases, increased energy gap in the in-plane sensor weakens the transport near the Fermi energy, whereas the narrowed h-BN potential barrier in the tunneling sensor strengthens the tunneling transport near the Fermi energy.
(Color online) (a) In-plane transport current per unit width (left) and energy gap (right) of the in-plane sensor as functions of external pressure under various voltage bias. (b) Tunneling current per unit cell (left) and compression strain ratio (right) of the tunneling sensor as functions of external pressure with different h-BN layers. The current of the tunneling sensor increases exponentially with the increasing external pressure and is sensitive to the h-BN layer numbers. Note that the tunneling sensor has much smaller operational and standby current density than that of the in-plane sensor.
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