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Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling
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10.1063/1.3644158
/content/aip/journal/apl/99/13/10.1063/1.3644158
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3644158
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Calculated vDOS for monoclinic HfO2 (dashed line) and experimental forward (pointed line) and reverse-bias (solid line) IETS spectra (Ref. 10).

Image of FIG. 2.
FIG. 2.

Experimental reverse-bias IETS spectra (Ref. 10) (filled curve) and calculated vDOS for monoclinic HfO2 with one O vacancy in the supercell (∼1.6 at. % of O vacancies) (dashed line) and for HfO2 with 12.5 at. % of O vacancies (solid line).

Image of FIG. 3.
FIG. 3.

Calculated v-DOS (gray line) for HfO2 and experimental IETS (black line) spectra for: ALD HfO2, gate injection (a); ALD HfO2, substrate injection (b); and MBE HfO2, substrate injection (c).

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/content/aip/journal/apl/99/13/10.1063/1.3644158
2011-09-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3644158
10.1063/1.3644158
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