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Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures
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10.1063/1.3644161
/content/aip/journal/apl/99/13/10.1063/1.3644161
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3644161
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of Hall mobilities in AlInN/AlN/GaN for different AlInN barrier thicknesses measured in vacuum.

Image of FIG. 2.
FIG. 2.

2DEG densities (ns ) as a function of temperature measured in vacuum.

Image of FIG. 3.
FIG. 3.

(a) Temperature dependence of ns measured in vacuum (open symbols) and air (closed symbols) for dAlInN  = 15 nm. Open triangles show the measured values in vacuum with decreasing temperatures from 773 to 300K. The arrows indicate the measurement directions. (b) The change of ns with time after introducing the air at 300 K.

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/content/aip/journal/apl/99/13/10.1063/1.3644161
2011-09-28
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3644161
10.1063/1.3644161
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