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High-frequency nonlinear characteristics of resonant-tunnelling diodes
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) DC and HF (for a DC bias of 0.56 V) I-V curves of an RTD with the following parameters: 2.7 nm-thick AlAs RTD barriers are sandwiched by In0.53Ga0.47 As layers with an undoped spacer of ≈1 nm close to the barriers and n-doping (1.5 × 1018 cm−3) in the more distant layers. The QW between the barriers is composed of three layers In0.53Ga0.47As/InAs/In0.53Ga0.47 As with the thickness of (nominally) 1.2 nm each. Other figures in the paper show the calculation and measurement results for the same RTD. The inset shows a schematic of an RTD.

Image of FIG. 2.
FIG. 2.

(Color online) (a) DC and HF conductances of the RTD. Dashed line shows the linear HF conductance . (b) GHF as a function of the oscillation amplitude for different DC biases.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Measured and calculated RTD I−V characteristics. The experimental curve without oscillations is measured by placing an absorbing material on the oscillator antenna to suppress oscillations. The theoretical and experimental curves without oscillations coincide practically ideally in the NDC region. The insets (b) and (c) show the hysteresis regions in more detail. (d) The amplitude of the oscillations calculated theoretically and the measured output power at the oscillation frequency of 109 GHz.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-frequency nonlinear characteristics of resonant-tunnelling diodes