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Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging
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10.1063/1.3644960
/content/aip/journal/apl/99/13/10.1063/1.3644960
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3644960
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic illustration of MOSFET structure after gate patterning and SDE formation. 3D elemental maps of (b) n- and (c) p-MOSFETs. Chemical isoconcentration surfaces associated with oxygen highlight the gate surface and gate oxide. Phosphorus, arsenic and boron, atoms are plotted. Silicon atoms are not shown for clarity.

Image of FIG. 2.
FIG. 2.

(Color online) Normal probability plots of the number of dopant atoms in the channel region. (a) n- and (b) p-MOSFETs. Each inset shows projected elemental maps around the extension edge region of an n- and p-MOSFET, with and without SDE, (the thickness in the y direction is 20 nm). Statistical analysis was performed in the shaded regions just under a gate oxide layer. Solid and broken lines represent the best-fitted plots with and without SDE formation, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) Sample structures prepared for APT analysis to show the mechanism of dopant fluctuation induced by SDE formation in n- and p-MOSFETs; (a) as-prepared gate pattern, (b) during SDE implantation, and (c) after activation annealing.

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/content/aip/journal/apl/99/13/10.1063/1.3644960
2011-09-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3644960
10.1063/1.3644960
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