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(Color online) Reciprocal space maps for m-plane InGaN/GaN heterostructures recorded at 90° rotations to each other along both principal in-plane directions as indicated. The x-ray beam was aligned parallel to  (a) on-axis , (b) off-axis and parallel to (c) on-axis , (d) off-axis .
(Color online) Microarea analysis of lattice tilts for m-plane InGaN/GaN heterostructures by high-resolution microbeam x-ray diffraction. (a) on-axis micro-RSM in an arbitrary scanning spot. (b) Microbeam line-scan measurement of the reflection intensity of (a). (c) on-axis micro-RSM in one of the non-observed intensity areas in (b).
Slip model schematics of the lattice tilts in a m-plane InGaN/GaN heterostructure. Slip planes and directions are as indicated.
(Color online) TEM image taken from a (0001) cross-section at the InGaN/GaN heterointerface. (a) Dislocations nucleated on the prism plane. (b) Fourier-filtered transfer image of the relationship between strain relaxation and lattice tilt.
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