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Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer
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10.1063/1.3645003
/content/aip/journal/apl/99/13/10.1063/1.3645003
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3645003
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagrams of VLEDs prepared in this work. (a) VLED-A (with IZO TCL/SiO2-NT arrays), (b) VLED-B (with SiO2-NT arrays but without IZO TCL), VLED-C (with a IZO TCL), and regular VLED (without IZO TCL/SiO2-NT arrays). (c) TEM and SEM images of a single SiO2-NT. Note that all devices are with the same chip size of 1 mm × 1 mm.

Image of FIG. 2.
FIG. 2.

(Color online) (a) The schematic of a single SiO2 nanotube exhibiting a step index tubular waveguide and light beams (indicated by arrows) traveling through the SiO2 tubing.

Image of FIG. 3.
FIG. 3.

(Color online) Comparisons of optoelectronic characteristics and corresponding far field emission patterns of all the fabricated VLEDs.

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/content/aip/journal/apl/99/13/10.1063/1.3645003
2011-09-29
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved light output of GaN-based vertical light emitting diodes using SiO2 nanotube arrays and transparent metal oxide current conduction layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3645003
10.1063/1.3645003
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