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Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
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10.1063/1.3645616
/content/aip/journal/apl/99/13/10.1063/1.3645616
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3645616
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the MIS capacitors structure and (b) AFM image of the as grown surface.

Image of FIG. 2.
FIG. 2.

C-V characteristics of the MIS structures and (inset) extracted apparent charge profile as a function of the applied bias. The exponential fitting of the accumulation regime and the flat-band voltages are also reported.

Image of FIG. 3.
FIG. 3.

Schematic conduction band diagram of the MIS capacitors with different oxide thicknesses at flat-band and (inset) extraction of the Ni/Al2O3/GaN conduction band alignment and the oxide electric field Fox from the VFB vs. tox plot.

Image of FIG. 4.
FIG. 4.

Qualitative energy band diagrams and charge distribution, assuming either (a) ionized donor charge or (b) polarization-charge inversion at the Al2O3/GaN interface.

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/content/aip/journal/apl/99/13/10.1063/1.3645616
2011-09-29
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3645616
10.1063/1.3645616
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