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(a) Schematic diagram of the MIS capacitors structure and (b) AFM image of the as grown surface.
C-V characteristics of the MIS structures and (inset) extracted apparent charge profile as a function of the applied bias. The exponential fitting of the accumulation regime and the flat-band voltages are also reported.
Schematic conduction band diagram of the MIS capacitors with different oxide thicknesses at flat-band and (inset) extraction of the Ni/Al2O3/GaN conduction band alignment and the oxide electric field Fox from the VFB vs. tox plot.
Qualitative energy band diagrams and charge distribution, assuming either (a) ionized donor charge or (b) polarization-charge inversion at the Al2O3/GaN interface.
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