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Photoluminescence due to inelastic exciton-exciton scattering in ZnMgO-alloy thin film
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10.1063/1.3646116
/content/aip/journal/apl/99/13/10.1063/1.3646116
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3646116
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Figures

Image of FIG. 1.
FIG. 1.

Excitation power dependence of PL spectra of Zn0.97Mg0.03O thin film taken at T = 12 K. The excitation intensities are shown at the left-hand side of the figures. The inset summarizes the peak intensity of the X-X band against the peak intensity of the LX band. LX and X-X emission lines result from the radiative recombination of localized excitons and inelastic exciton-exciton scattering, respectively.

Image of FIG. 2.
FIG. 2.

(a) Evolution of PL (solid lines) and absorption (dashed lines) from Zn0.97Mg0.03O thin film as a function of T with I EXC = 6 kW/cm2. The free exciton (FX) absorption energy and its LO-phonon assisted (FX-LO) absorption energy are denoted as solid circles and open circles, respectively. (b) T-dependent FX absorption energy (solid squares) and the PL peak energy of X-X band (solid circles). The solid lines are the results of fitting.

Image of FIG. 3.
FIG. 3.

Excitation-power dependence of PL spectra of Zn0.97Mg0.03O thin film at (a) T = 80 K, (b) T = 160 K, and (c) T = 280 K. The I EXC for the spectra at 280 K is different to that at 80 K and 160 K.

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/content/aip/journal/apl/99/13/10.1063/1.3646116
2011-09-28
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence due to inelastic exciton-exciton scattering in ZnMgO-alloy thin film
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3646116
10.1063/1.3646116
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