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InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
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10.1063/1.3646386
/content/aip/journal/apl/99/13/10.1063/1.3646386
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3646386
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Figures

Image of FIG. 1.
FIG. 1.

High-resolution TEM image of InAs QW formed on perfect WZ-InP NW.

Image of FIG. 2.
FIG. 2.

(a) STEM image of 8-ML InAs deposited InP NW with stacking-fault segments, (b) high-resolution TEM images of InAs QD formed on stacking-fault segment, and (c) boundary region of stacking-fault segment and perfect WZ segment.

Image of FIG. 3.
FIG. 3.

(Color online) PL spectra of single NWs with pure WZ crystal phase structure and with stacking-fault segments. The excitation power density was approximately 20 W/cm2, and the integration time for detection was 300 ms.

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/content/aip/journal/apl/99/13/10.1063/1.3646386
2011-09-30
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3646386
10.1063/1.3646386
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