Full text loading...
Dependence of interface trap density (D it) on the GeNx formation temperature before and after PMA at 400 °C.
Dependence of interface trap density (D it) on the PMA temperature. The GeNx layer was formed at RT.
C g–V g characteristics of Al/Si3N4/GeNx/p-Ge MIS structure fabricated at RT followed by postmetallization annealing at 400 °C, measured at (a) RT and (b) 180 K.
Relationship between Ge surface potential and applied gate voltage at RT.
Extracted interface trap density (D it) distribution in the lower half of the p-Ge band gap at 180 K.
Article metrics loading...