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Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature
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10.1063/1.3647621
/content/aip/journal/apl/99/13/10.1063/1.3647621
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3647621
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dependence of interface trap density (D it) on the GeNx formation temperature before and after PMA at 400 °C.

Image of FIG. 2.
FIG. 2.

Dependence of interface trap density (D it) on the PMA temperature. The GeNx layer was formed at RT.

Image of FIG. 3.
FIG. 3.

C gV g characteristics of Al/Si3N4/GeNx/p-Ge MIS structure fabricated at RT followed by postmetallization annealing at 400 °C, measured at (a) RT and (b) 180 K.

Image of FIG. 4.
FIG. 4.

Relationship between Ge surface potential and applied gate voltage at RT.

Image of FIG. 5.
FIG. 5.

Extracted interface trap density (D it) distribution in the lower half of the p-Ge band gap at 180 K.

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/content/aip/journal/apl/99/13/10.1063/1.3647621
2011-09-30
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/13/10.1063/1.3647621
10.1063/1.3647621
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