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HRTEM images of the PIDs (a) in projection and (b) in projection. Image simulations for a PID according to Northrup (c) in projection with a foil thickness of 5.4 nm and a defocus of −4.5 nm (d) in projection with a foil thickness of 5 nm and a defocus of −5 nm.
(Color) PID (a) geometrical model, (b) atomic model according to Northrup in projection. The left part shows the PID embedded in the GaN matrix, the right part only the central slice of the PID, (c) model of the (0001) inversion domain boundary of Vennéguès and corresponding simulation in projection, and (d) in projection.
(Color online) Temperature dependence of the hole concentration measured by temperature dependent Hall-effect (circles) and calculated by the neutrality equation using the parameters EA − EV = 160 meV, NA = 4.2 × 1019 cm−3, ND = 7 × 1018 cm−3, , and gA = 2 (line).
Measurements of Mg concentration by SIMS, free hole concentration (FHC) by Hall effect at 300K, density and mean size w of the PIDs by TEM, and the estimated amount of Mg bound in the PIDs.
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