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Picosecond carrier lifetimes in dilute GaInNAs grown on InP substrate
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10.1063/1.3644954
/content/aip/journal/apl/99/14/10.1063/1.3644954
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3644954
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Time-resolved differential transmission for the reference sample and the samples with 3% N content and different In content. The incident pump fluence is 4.7 μJ/cm2. The table reports the fitting A1, A2, C parameters for the curves using the biexponential decay function.

Image of FIG. 2.
FIG. 2.

Normalized differential transmission at different fluences for sample that contains 53% of In and 3% of N.

Image of FIG. 3.
FIG. 3.

Relative strength A1 of the fast decay component and relative strength A2 of the slow decay component as a function of the pump fluence: Symbols are given by the biexponential law fit and the solid line is the saturation law fitting.

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/content/aip/journal/apl/99/14/10.1063/1.3644954
2011-10-03
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Picosecond carrier lifetimes in dilute GaInNAs grown on InP substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3644954
10.1063/1.3644954
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