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(Color online) AFM images of MBE-grown homoepitaxial GaP over a range of substrate growth temperatures and P2:Ga flux ratios. The x-axis represents substrate growth temperature and the y-axis represents the P2 to Ga flux ratio. Each sample was measured on a 5 μm × 5 μm scale with an average z-range of 0 to 2.5 nm. Root-mean-square surface roughness (Rq) measurements are given for each image.
Post-growth RHEED pattern images taken at 600 °C, in the (a)  and (b)  directions, showing a streaky 2 × 4 pattern, from a GaP growth that was performed at 680 °C and 16:1 P2:Ga flux ratio.
(Color online) Comparison of surface morphologies measured by AFM on a 5 μm × 5 μm scale for (a) MOCVD-grown and (b) MBE-grown homoepitaxial GaP, grown at a substrate temperature of 725 °C and V:III ratios of 100:1 and 30:1, respectively.
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