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High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition
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10.1063/1.3644956
/content/aip/journal/apl/99/14/10.1063/1.3644956
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3644956
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM images of MBE-grown homoepitaxial GaP over a range of substrate growth temperatures and P2:Ga flux ratios. The x-axis represents substrate growth temperature and the y-axis represents the P2 to Ga flux ratio. Each sample was measured on a 5 μm × 5 μm scale with an average z-range of 0 to 2.5 nm. Root-mean-square surface roughness (Rq) measurements are given for each image.

Image of FIG. 2.
FIG. 2.

Post-growth RHEED pattern images taken at 600 °C, in the (a) [110] and (b) [01] directions, showing a streaky 2 × 4 pattern, from a GaP growth that was performed at 680 °C and 16:1 P2:Ga flux ratio.

Image of FIG. 3.
FIG. 3.

(Color online) Comparison of surface morphologies measured by AFM on a 5 μm × 5 μm scale for (a) MOCVD-grown and (b) MBE-grown homoepitaxial GaP, grown at a substrate temperature of 725 °C and V:III ratios of 100:1 and 30:1, respectively.

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/content/aip/journal/apl/99/14/10.1063/1.3644956
2011-10-04
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3644956
10.1063/1.3644956
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