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Quantum anomalous Hall effect in doped ternary chalcogenide topological insulators TlBiTe2 and TlBiSe2
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10.1063/1.3645624
/content/aip/journal/apl/99/14/10.1063/1.3645624
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3645624

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a)-(c) Band structures of topological insulator thin films. (a) M = 0 and Δ = 0 and (b) M = 0 and Δ ≠ 0, which correspond to the larger and smaller thickness of pristine thin films, respectively. (c) M ≠ 0 and Δ ≠ 0, which corresponds to the smaller thickness of thin films with ferromagnetic order. (d) Phase diagram of Hall conductance as a function of Δ and M.

Image of FIG. 2.
FIG. 2.

(Color online) The calculated magnetic moments of X-doped TlBiTe2 (TlBiSe2), where X = Ti, Cr, and Fe. The slashed area indicates the insulating magnetic states. Inset is the difference of formation energies between X@Bi and X@Fe, ΔEF = EX@Bi−EX@Tl, in X-doped TlBiTe2 (TlBiSe2). The substitutional Au cannot induce magnetism and not shown here.

Image of FIG. 3.
FIG. 3.

(Color online) TDOS and partial DOS of X-doped TlBiTe2 with X at Bi [(a)-(d)] and Tl [(e)-(h)] sites, where X = Cr, Fe, Ti, and Au. The Fermi level is indicated by the dashed line at 0 eV.

Tables

Generic image for table
Table I.

Values of Cr-Cr (Fe-Fe) distance d and magnetization energy Emag for the ground state of the two-atom-doped TlBiTe2 and TlBiSe2, which have the insulating magnetic states, with Cr@Bi, Cr@Bi, and Fe@Bi.

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/content/aip/journal/apl/99/14/10.1063/1.3645624
2011-10-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantum anomalous Hall effect in doped ternary chalcogenide topological insulators TlBiTe2 and TlBiSe2
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3645624
10.1063/1.3645624
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