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Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy
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Image of FIG. 1.

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FIG. 1.

HAADF-STEM image of the InAlAs/InP interface showing higher contrast at the interface (arrow).

Image of FIG. 2.

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FIG. 2.

(Color online) HAADF-STEM image and corresponding atomically resolved EDS maps of the InAlAs/InP interface. The elemental distribution is obtained with the integrated intensities of the corresponding energy. Left column shows acquired maps without any processing, except correction of the background in the final images. Right column shows the same elemental maps with applied averaging over 11 pixels in order to enhance signal of Al and In atomic positions. Dotted lines highlight interface region where Al is depleted.

Image of FIG. 3.

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FIG. 3.

(Color online) Line profile across the interface averaged over the whole height of the map. The Al concentration clearly decreases two atomic planes before the InP. On the other hand, the In concentration is as high in first atomic plane as inside the InP. The second plane shows slight decrease in the peak height gradually decreasing further into InAlAs.

Image of FIG. 4.

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FIG. 4.

(Color online) Corresponding schematic of the structure of the InAlAs/InP interface.

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/content/aip/journal/apl/99/14/10.1063/1.3645632
2011-10-03
2014-04-17

Abstract

The structure of epitaxially grown InAlAs/InP interfaces was studied using atomically resolved x-ray energy dispersive spectroscopy in scanning transmission electron microscopy. As and P sublattices show sharp termination on the interface. The In sublattice is continuous across the interface. The study has shown the depletion of the Al concentration at the interface; at the last atomic columns of the InAlAs, In occupancy is close to 100%, while Al occupancy is almost zero. A monolayer of InAs at the interface is consistent with substitution of As for P at the surface preceding growth.

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Scitation: Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3645632
10.1063/1.3645632
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