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Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy
5. D. O. Klenov, B. Freitag, H. S. von Harrach, A. J. D’Alfonso, and L. J. Allen, Microscopy and Microanalysis Conference, MRS Bulletin (submitted).
9. D. Cherns, A. Howie, and M. H. Jacobs, Z. Naturforsch. 28a, 565 (1973).
11. D. R. Lide, CRC Handbook of Chemistry and Physics, 90th ed. (CRC, Boca Raton, FL, 2010).
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The structure of epitaxially grown InAlAs/InP interfaces was studied using atomically resolved x-ray energy dispersive spectroscopy in scanning transmission electron microscopy. As and P sublattices show sharp termination on the interface. The In sublattice is continuous across the interface. The study has shown the depletion of the Al concentration at the interface; at the last atomic columns of the InAlAs, In occupancy is close to 100%, while Al occupancy is almost zero. A monolayer of InAs at the interface is consistent with substitution of As for P at the surface preceding growth.
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