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(Color online) (a) X-ray diffractograms, (b) x-ray absorption spectra and bright field TEM images of TiOx films annealed at (c) 300 °C, (d) 450 °C, and (e) 550 °C.
(Color online) (a) Transfer curves of TiOx TFT devices annealed at different temperatures and (b) output curves of the device with TiOx annealed at 500 °C.
(Color online) Schematic energy level diagrams reflecting the relative position of the Fermi level (EF) with respect to the conduction band minimum (C.B.) and valence band maximum (V.B.) at different annealing temperatures. The corresponding values of the bandgap (Eg) and the relative energy difference between EF and V.B. (ΔEVB), and between EF and C.B. (ΔECB) are indicated below the diagram.
(Color online) (a) Transfer curves shifting towards positive VG values upon positive bias stress, with a slight recovery 1 day after the stress experiment. (b) The shift in threshold voltage (ΔVth) upon bias stress.
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