1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film
Rent:
Rent this article for
USD
10.1063/1.3646378
/content/aip/journal/apl/99/14/10.1063/1.3646378
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3646378
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Hf 4f and Si 2 s core-level spectra taken from TiN gate electrode surface of ((a) and (b)) “TiN single gate” and ((c) and (d)) “poly-Si/TiN gate” stacks with a TOA of 90°. Binding energies of spectra were calibrated by adventitious C 1 s peak.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Relationships between EOT and Jg of “TiN single gate” and “poly-Si/TiN gate” stacks without PDA and with PDA at 600, 700, 800, 900, and 1000 °C for 30 s in N2 ambient. EOT increased as annealing temperature increased. Schematics of the TiN/HfSiO/SiO2/Si gate stacks (b) without anneal and (c) with 1000 °C PDA performed after poly-Si removal, and (d) with 1000 °C PDA performed before poly-Si removal.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Relationships between EOT and Jg of 5-nm-thick and 100-nm-thick TiN/HfSiO/SiO2/Si gate stacks after vacuum annealing at 600, 700, 800, and 900 °C for 30 s. EOT increased as annealing temperature increased. (b) TiN thickness dependent Hf 4f core-level spectra taken from HfSiO/SiO2/Si stacks after vacuum annealing and subsequent TiN gate removal. Binding energies of spectra were calibrated using bulk Si 2 p peaks.

Image of FIG. 4.
FIG. 4.

(Color online) (a) EOT of poly-Si/Ti(O)N/HfSiO/SiO2/Si gate stacks as function of annealing temperature. Hf 4f and Si 2 s core-level spectra taken from (b) TiN/HfSiO/SiO2/Si and (c) oxygen-incorporated TiON/HfSiO/SiO2/Si gate stacks after PDA, FGA, and subsequent poly-Si removal with TOA of 90°. Binding energies of spectra were calibrated by adventitious C 1 s peak.

Loading

Article metrics loading...

/content/aip/journal/apl/99/14/10.1063/1.3646378
2011-10-07
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3646378
10.1063/1.3646378
SEARCH_EXPAND_ITEM