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Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires
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10.1063/1.3646389
/content/aip/journal/apl/99/14/10.1063/1.3646389
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3646389
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) PL spectra measured at 300 K and 4 K from the samples in series A under continuous excitation. Inset: HAADF-STEM image of a multi-stacked 4.8 nm GaN/7 nm Al0.28Ga0.72 N QDs in series B. The dark and bright contrasts are AlGaN and GaN regions, respectively.

Image of FIG. 2.
FIG. 2.

(Color online) Normalized integrated PL intensity as a function of temperature from 1.8 nm-GaN/7 nm-AlxGa1−xN QDs with xAl  = 51%, 40%, and 23%. Inset: PL peak energy as a function of xAl. Solid and dash lines correspond to the calculated ground state transition energy of 1.5 nm (blue) and 1.8 nm (red) GaN/7 nm-AlxGa1−xN quantum wells, assuming a polarization discontinuity corresponding to ΔPSP (solid lines) and ΔPSP /2 (dash lines).

Image of FIG. 3.
FIG. 3.

(Color online) Normalized integrated PL intensity decay plotted as a function of time from 1.8 nm-GaN/7 nm-AlxGa1−xN QDs measured at 4 K. The inset illustrates the constant behavior of the decay time as a function of temperature.

Image of FIG. 4.
FIG. 4.

(Color online) (a) PL peak energy position and (b) PL decay time from GaN/Al0.28Ga0.72 N multi-QDs plotted as a function of the GaN QD thickness in comparison with the calculations for various polarization discontinuities: ΔPSP , ΔPSP /2, and ΔPSP /4.

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/content/aip/journal/apl/99/14/10.1063/1.3646389
2011-10-06
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3646389
10.1063/1.3646389
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