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Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001)
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10.1063/1.3646391
/content/aip/journal/apl/99/14/10.1063/1.3646391
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3646391
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) FESEM plan view images of GaN nanowall network grown at 2, 6, and 8 sccm nitrogen flow rate and of nanocolumns grown at 4.5 sccm nitrogen flow rate on bare c-plane sapphire. Φ, the angle between the inclined faces of nanowalls with respect to (0001) plane, is shown in each images.

Image of FIG. 2.
FIG. 2.

Typical 2⊝-ω XRD pattern of wurtzite GaN nanowall and nanorods. Inset shows the representative RHEED pattern of nanowall and nanorods.

Image of FIG. 3.
FIG. 3.

(Color online) Cathodoluminescence spectrum of the GaN nanowall network grown at 2, 6, and 8 sccm nitrogen flow rate and nanocolumns grown at nitrogen flow rate 4.5 sccm. Inset shows the plot of ratio R versus nitrogen flux.

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/content/aip/journal/apl/99/14/10.1063/1.3646391
2011-10-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3646391
10.1063/1.3646391
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