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Influence of Mg-doped barriers on semipolar () multiple-quantum-well green light-emitting diodes
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/content/aip/journal/apl/99/14/10.1063/1.3647560
2011-10-07
2014-12-19

Abstract

We report the effects of Mgdoping in the barriers of semipolar () multiple-quantum-welllight-emitting diodes(LEDs) with long emission wavelengths (>500 nm). With moderate Mgdoping concentrations (3 × 1018–5 × 1018 cm−3) in the barriers, the output power was enhanced compared to those with undoped barriers, which suggests that hole transport in the active region is a limiting factor for device performance. Improved hole injection due to Mgdoping in the barriers is demonstrated by dichromatic LED experiments and band diagram simulations. With Mg-doped AlGaN barriers, double-quantum-well LEDs with orange to red emission (λ > 600 nm) were also demonstrated.

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Scitation: Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3647560
10.1063/1.3647560
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