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Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors
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10.1063/1.3647561
/content/aip/journal/apl/99/14/10.1063/1.3647561
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3647561
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Time-dependent drain current of the ZnO nanorod gated AlGaN/GaN HEMTs and time dependant normalized percent drain current change.

Image of FIG. 2.
FIG. 2.

A schematic of the sensing mechanism of the ZnO nanorod-gated AlGaN/GaN HEMTs.

Image of FIG. 3.
FIG. 3.

(Color online) Time-dependent CO detection sensitivity of a ZnO nanorod functionalized AlGaN HEMT sensor exposed to 250 ppm CO concentration measured at room temperature and 150 °C. (Inset) An enlargement of the CO detection sensitivity measured at room temperature.

Image of FIG. 4.
FIG. 4.

(Color online) Drain current of the ZnO nanorod functionalized AlGaN HEMT sensor exposed to 250 ppm CO and pure nitrogen at different temperatures.

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/content/aip/journal/apl/99/14/10.1063/1.3647561
2011-10-05
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3647561
10.1063/1.3647561
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