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Nanosecond-range imprint and retention characterized from polarization-voltage hysteresis loops in insulating or leaky ferroelectric thin films
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10.1063/1.3647577
/content/aip/journal/apl/99/14/10.1063/1.3647577
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3647577
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) The input pulse and voltage transient across R t from the pulse measurement for PZT. (b) The transferred P-V hysteresis loop from domain switching currents. The upper panel shows the equivalent circuit description of Sawyer-Tower and pulse measurements.

Image of FIG. 2.
FIG. 2.

(Color online) Capacitor area dependences of domain coercive voltage and switching time for PZT at V = 2.5 V fitted by two solid lines.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Semilogarithmic time dependence of positive/negative coercive voltage for PZT after the presetting pulse sketched in the upper panel, where the solid lines are the best fitting of the data. (b) Exponential degradation of the remanent polarization with time fitted by the solid line.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Positive/negative domain switching current transient for BFO with an electrode area of 8.35 × 10−5 cm2 at V = ±12 V and pulse width of 1000 ns before (a solid line) and after (a dashed line) leakage current deduction, where the inset shows the voltage dependence of domain switching current fitted by two solid lines. (b) The transferred P-V hysteresis loops from domain switching currents, where the opened symbols show the measurement from a Radiant tester at 50 kHz.

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/content/aip/journal/apl/99/14/10.1063/1.3647577
2011-10-06
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanosecond-range imprint and retention characterized from polarization-voltage hysteresis loops in insulating or leaky ferroelectric thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3647577
10.1063/1.3647577
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