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On the strain in n-type GaN
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10.1063/1.3647772
/content/aip/journal/apl/99/14/10.1063/1.3647772
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3647772
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The evolution of triple axis 2θ-ω scans for 0.7 μm Ge doped GaN as a function of free carrier concentration up to ∼1.1 × 1019 cm−3 on templates with TD of ∼2 × 1010 cm−2.

Image of FIG. 2.
FIG. 2.

(Color online) The evolution of PL spectra at room temperature for Ge doped GaN as a function of free carrier concentration. A red shift of the band edge is observed with the increase of carrier concentration up to n ∼ 1.1 × 1019 cm−3.

Image of FIG. 3.
FIG. 3.

Cross-sectional electron microscopy of Ge doped GaN with n∼8 × 1018 cm−3. (a) LAADF STEM of the Ge doped layer where the dashed line mark the start of Ge doping. Brightness and contrast have been adjusted to accentuate dislocation visibility. (b) and (c) Conventional weak beam dark field images for g =  and g = 0002, respectively.

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/content/aip/journal/apl/99/14/10.1063/1.3647772
2011-10-07
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the strain in n-type GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/14/10.1063/1.3647772
10.1063/1.3647772
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