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(Color online) Schematics of the modeled micro cavity. p-silicon wafer: anode, φ = 0 V; silicon nitride and polyimide: dielectrics; embedded nickel grid: cathode, φ = −500 V.
(Color online) Experimental result from phase resolved optical emission spectroscopy of the microplasma array as registered with an intensified charge-coupled device (ICCD) camera (false colors) for a gate interval of 100 ns and spectrally integrated (p = 105 Pa Ar, U PP = 830 V, f ac = 20 kHz). Image taken at V(t) = −400 V applied to Ni-grid.
(Color online) Temporal evolution of the electron density distribution in units of cm−3 on logarithmic scale. (a)-(f) The ignition of the three cavities starting at 25 ns in time steps of Δt = 5 ns. The width and separation of a single cavity is 50 μm, the overall depth is 45 μm. The simulation is performed for Ar as a working gas at atmospheric pressure, a driving DC voltage of −500 V applied to the embedded Ni-grid.
(Color online) Simulated potential at t = 80 ns. Left hand cavity is ignited whereas right hand cavity shows vacuum potential. Centered cavity is in the stage of transition from Townsend mode to glow mode.
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