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Improved negative bias illumination instability of sol-gel gallium zinc tin oxide thin film transistors
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10.1063/1.3646388
/content/aip/journal/apl/99/15/10.1063/1.3646388
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/15/10.1063/1.3646388
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Transfer characteristics of GZTO TFTs at VDS = 40V with varying Ga-Zn-Sn composition and electrical parameters.

Image of FIG. 2.
FIG. 2.

(Color online) XPS spectra of O 1s of (a) ZTO (Zn:Sn = 1:1), (b) Sn-rich ZTO (Zn:Sn = 1:2), and (c) optimized GZTO (Ga:Zn:Sn = 0.2:0.8:2) sol-gel thin films.

Image of FIG. 3.
FIG. 3.

(Color online) Evolution of the transfer characteristics (VDS = 20V) under NBIS for ZTO and (b) GZTO TFTs with methacrylate hybrimer passivation. |ΔVth| versus stress time plots of (c) ZTO and GZTO devices with extrapolation using the stretched-exponential model.

Image of FIG. 4.
FIG. 4.

(Color online) Transfer characteristics under NBIS (stress time = 3600s) with various wavelengths of (a) ZTO and (b) GZTO TFTs with a passivation layer. ΔVth versus stress time plots of (c) ZTO and (d) GZTO TFTs with various wavelengths.

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/content/aip/journal/apl/99/15/10.1063/1.3646388
2011-10-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved negative bias illumination instability of sol-gel gallium zinc tin oxide thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/15/10.1063/1.3646388
10.1063/1.3646388
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