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(Color online) Transfer characteristics of GZTO TFTs at VDS = 40V with varying Ga-Zn-Sn composition and electrical parameters.
(Color online) XPS spectra of O 1s of (a) ZTO (Zn:Sn = 1:1), (b) Sn-rich ZTO (Zn:Sn = 1:2), and (c) optimized GZTO (Ga:Zn:Sn = 0.2:0.8:2) sol-gel thin films.
(Color online) Evolution of the transfer characteristics (VDS = 20V) under NBIS for ZTO and (b) GZTO TFTs with methacrylate hybrimer passivation. |ΔVth| versus stress time plots of (c) ZTO and GZTO devices with extrapolation using the stretched-exponential model.
(Color online) Transfer characteristics under NBIS (stress time = 3600s) with various wavelengths of (a) ZTO and (b) GZTO TFTs with a passivation layer. ΔVth versus stress time plots of (c) ZTO and (d) GZTO TFTs with various wavelengths.
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