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Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode
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10.1063/1.3650253
/content/aip/journal/apl/99/15/10.1063/1.3650253
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/15/10.1063/1.3650253
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Simulated I-V characteristics of AlGaN/GaN RTD under the first forward-scan of bias voltage and (b) dependence of IP and IV with respect to forward-scan number. The defect density varies from 5 × 103 to 5 × 1011 cm–2.

Image of FIG. 2.
FIG. 2.

I-V characteristics of AlGaN/GaN RTD with a defect density of 5 × 108 cm−2 under the 1st, 15th, and 20th forward- and backward-scans of bias voltage.

Image of FIG. 3.
FIG. 3.

Simulated ac current through Rp of NDR oscillator based on the AlGaN/GaN RTD with a defect density of 5 × 108 cm−2 by using the RTD model under the 1st, 20th, and 50th scans, respectively.

Image of FIG. 4.
FIG. 4.

Dependence of I-V characteristics of AlGaN/GaN RTD with a defect density of 5 × 108 cm−2 on (a) AlGaN barrier thickness and (b) GaN well thickness, under the first forward-scan of bias voltage.

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/content/aip/journal/apl/99/15/10.1063/1.3650253
2011-10-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/15/10.1063/1.3650253
10.1063/1.3650253
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