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Enhanced Rashba effect in transverse magnetic fields observed on InGaAs/GaAsSb resonant tunneling diodes at temperatures up to T = 180 K
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10.1063/1.3650715
/content/aip/journal/apl/99/15/10.1063/1.3650715
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/15/10.1063/1.3650715
/content/aip/journal/apl/99/15/10.1063/1.3650715
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/content/aip/journal/apl/99/15/10.1063/1.3650715
2011-10-12
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced Rashba effect in transverse magnetic fields observed on InGaAs/GaAsSb resonant tunneling diodes at temperatures up to T = 180 K
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/15/10.1063/1.3650715
10.1063/1.3650715
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