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Subwavelength lithography by waveguide mode interference
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10.1063/1.3651274
/content/aip/journal/apl/99/15/10.1063/1.3651274
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/15/10.1063/1.3651274
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagram of interference between two oppositely propagating TE modes in the MDW. (b) Intensity contrast of the interference field by TE modes in the MDW, together with SPPs at a single metal-dielectric interface for reference. (c) | E |2 distributions for the interference of TE modes (right-hand side) and SPPs (left-hand side).

Image of FIG. 2.
FIG. 2.

(Color online) (a) Patterning length, (b) decay length of electric field and patterning resolution, for TE modes and SPPs lithography. (c) | E |2 distributions as h d = 30 nm and 50 nm at a finite photoresist thickness of h r = 100 nm. Only the field between the slits is shown.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Experimental configuration used in TE mode lithography. (b) SEM picture of the metallic slits. Inset shows the light transmitting through the slits by using an optical microscope. 2D view of the AFM image of the recorded patterns in photoresist for (c) h d = 30 nm and (d) h d = 50 nm.

Image of FIG. 4.
FIG. 4.

(Color online) 3D view of the AFM image of the pattern in a selected area as indicated with dashed lines in Fig. 3(c). Inset shows the cross-section profile of the pattern.

Image of FIG. 5.
FIG. 5.

(Color online) (a) E y distribution in the xz-plane of a ring slit lithography configuration. The arrows at the bottom illustrate the polarization of the exposure TE01 mode. (b) | E |2 distribution on the x-y plane at a distance of 16 nm from the dielectric film.

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/content/aip/journal/apl/99/15/10.1063/1.3651274
2011-10-11
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Subwavelength lithography by waveguide mode interference
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/15/10.1063/1.3651274
10.1063/1.3651274
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