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Influence of bending strains on radio frequency characteristics of flexible microwave switches using single-crystal silicon nanomembranes on plastic substrate
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10.1063/1.3651276
/content/aip/journal/apl/99/15/10.1063/1.3651276
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/15/10.1063/1.3651276
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Optical image of flexible switches on a bent plastic substrate. (b) Optical-microscope image of a finished SPST switch. Inset image shows the switch circuit diagram. The series/shunt diode (D1/D2) areas are 40/40 μm2. The electrodes (labeled as “S” for “signal”) cover two strips of the SiNM, and the metal electrodes labeled as “G” are for grounding.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Schematic of the mechanical bending for the switch. The dashed double arrows show the current flow direction of the diodes. (b) Measurement setup for the bending tests (strain = 0.31% as an example). (c) Measured S21 (insertion loss) and S11 (return loss) of the switch under ON state (If = 10 mA). (d) Measured S21 (isolation) and S11 (return loss) under OFF state (If = 0 mA). The convex bending radii are 77.5 mm, 38.5 mm, 28.5 mm, and 21 mm, respectively. The corresponding tensile strains are 0.11%, 0.23%, 0.31%, and 0.42%, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) (a) RF/microwave strain equivalent circuit model (ON state) for flexible microwave switches using single-crystal SiNMs on plastic substrate. Measured S21 (insertion loss) and S11 (return loss) of the flexible microwave switch under ON state (solid curves, If = 10 mA), with comparison of the calculated results using developed model (dashed curves), with (b) no strain and (c) 0.42% strain. (d) ON state circuit parameters reduction (in %) dependence on tensile bending strains for the series intrinsic and parasitic resistance Ri1 + Rs1 and parasitic inductance Ls1, respectively.

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/content/aip/journal/apl/99/15/10.1063/1.3651276
2011-10-11
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of bending strains on radio frequency characteristics of flexible microwave switches using single-crystal silicon nanomembranes on plastic substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/15/10.1063/1.3651276
10.1063/1.3651276
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