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Room-temperature organic-based spin polarizer
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10.1063/1.3651329
/content/aip/journal/apl/99/15/10.1063/1.3651329
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/15/10.1063/1.3651329
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic view of the device structure. (b) Chemical structure of TCNE (tetracyanoethylene). (c) Chemical structure of rubrene (C42H28).

Image of FIG. 2.
FIG. 2.

(Color online) (a) I-V characteristics of the spin valve with the structure of Fe (50 nm)/rubrene (10 nm)/V[TCNE] x (300 nm) at different temperatures: 100 K, 150 K, 200 K, and 250 K. (b) dI/dV as a function of bias voltage Vb at different temperatures: 100 K, 150 K, and 200 K.

Image of FIG. 3.
FIG. 3.

(Color online) Coercive fields of Fe (50 nm) film and V[TCNE] x (300 nm) film measured separately by SQUID at 100 K. The inset figure shows enlarged detail of the hysteresis loop for V[TCNE] x film.

Image of FIG. 4.
FIG. 4.

(Color online) MR measurements of the spin valve with the structure of Fe (50 nm)/rubrene (10 nm)/V[TCNE] x (300 nm) at 100 K with a bias of 2500 mV.

Image of FIG. 5.
FIG. 5.

(Color online) MR measurements at 500 mV bias voltage at different temperature: (a) 200 K, (b) 250 K, (c) 275 K, and (d) 300 K. The arrows highlight the MR peaks.

Image of FIG. 6.
FIG. 6.

(Color online) (Black square) Bias dependence of MR values at 100 K. (Red triangle) Temperature dependence of MR values at 500 mV. The inset shows temperature dependent specific resistance (Ω·cm) of the spin valve device and V[TCNE] x film measured separately.

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/content/aip/journal/apl/99/15/10.1063/1.3651329
2011-10-11
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room-temperature organic-based spin polarizer
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/15/10.1063/1.3651329
10.1063/1.3651329
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