Full text loading...
Interband optical momentum matrix elements of an AlN/GaN superlattice as a function of GaN monolayer thickness, calculated at the Γ point between the highest valence band and the lowest conduction band. All the values are normalized to the square value of the momentum matrix element for GaN bulk. The and denote the components that are perpendicular and parallel to the c-axis, respectively.
Energy gap of AlN/GaN superlattice as a function of GaN monolayer-thickness.
Energy band structure around the Γ point of the (a) (AlN)20/(GaN)0 and (b) (AlN)19/(GaN)1 superlattices. Energies are measured from the valence band top at the Γ point.
(Color online) Isosurfaces of the wavefunctions in the (a) lowest conduction band, (b) HH band, (c) LH band, and (d) CH band at the Γ point in the (AlN)19/(GaN)1 superlattices. The isovalues are ±1.08 (e/Å3). Spheres represent Ga atoms.
Article metrics loading...