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Effect of interface states on the instability under temperature stress in amorphous SiInZnO thin film transistor
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10.1063/1.3645597
/content/aip/journal/apl/99/16/10.1063/1.3645597
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3645597

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Transfer curves and (b) the frequency dependent C-V curves of SIZO-TFTs with different AL thickness.

Image of FIG. 2.
FIG. 2.

(Color online) The DOSs of SIZO-TFTs with different AL thickness extracted from MFM technique.

Image of FIG. 3.
FIG. 3.

(Color online) The evolutions of transfer curves of SIZO-TFTs with different AL thickness under TS. (a) ΔVth ∼4.28 V for 18 nm thick SIZO-TFT, (b) ΔVth ∼4.93 V for 31 nm thick SIZO-TFT, and (c) ΔVth ∼4.95 V for 40 nm thick SIZO-TFT, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) The Ea as a function of Vgs of SIZO-TFTs with AL thickness. The inset shows the FRs depending on AL thickness.

Image of FIG. 5.
FIG. 5.

(Color online) The variation of Nit and ΔVth with AL thickness. The inset shows the FRs and ΔVth depending on the Nit .

Tables

Generic image for table
Table I.

Summarization of electrical properties of SIZO-TFTs with AL thickness.

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/content/aip/journal/apl/99/16/10.1063/1.3645597
2011-10-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of interface states on the instability under temperature stress in amorphous SiInZnO thin film transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/16/10.1063/1.3645597
10.1063/1.3645597
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