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Electrical spin injection and detection at Al2O3/n-type germanium interface using three terminal geometry
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online). (a) Schematic drawing of the three-terminal device used for electrical spin injection and detection in germanium. Magnetic field is applied either along y (in-plane geometry) or along z (out-of-plane geometry). (b) IV characteristics of the Pt/Co/NiFe/Al2O3 tunnel contact at various temperatures. Inset: temperature dependence of the tunnel contact R × A product (I = 0.5 μA).

Image of FIG. 2.
FIG. 2.

(Color online). (a) Low field and (b) high field dependence of the spin signal for two different bias currents − 10 μA (−217 mV) and −20 μA (−274 mV) showing both Hanle (out-of-plane) and inverted Hanle (in-plane) effects. Measurements were performed at 10 K. Black solid lines in (a) are Lorentzian fits. ((c) and (d)) Comparison between experimental (open symbols) and calculated (solid lines) spin signals for in-plane and out-of-plane configurations at −10 μA and −20 μA. Data were normalized to the maximum value.

Image of FIG. 3.
FIG. 3.

(Color online). ((a) and (b)) Bias dependence of the spin signal and of the HWHM at 10 K for both in-plane and out-of-plane geometries. The inset in (a) shows the bias dependence of the spin resistance-area product Rs  × A in kΩ. μm2. Dashed lines are guides for the eye. (c) Temperature dependence of inverted Hanle effect for two different bias currents −10 μA (−217 mV) and −20 μA (−274 mV). Spin signal is still observable at 220 K. The inset shows the inverted Hanle signal measured for a bias current of−20 μA (−274 mV) at various temperatures. (d) Temperature dependence of the HWHM of Hanle curves for −10 μA (−217 mV) and −20μA (−274 mV) bias currents.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical spin injection and detection at Al2O3/n-type germanium interface using three terminal geometry