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(Color online). (a) Schematic drawing of the three-terminal device used for electrical spin injection and detection in germanium. Magnetic field is applied either along y (in-plane geometry) or along z (out-of-plane geometry). (b) I – V characteristics of the Pt/Co/NiFe/Al2O3 tunnel contact at various temperatures. Inset: temperature dependence of the tunnel contact R × A product (I = 0.5 μA).
(Color online). (a) Low field and (b) high field dependence of the spin signal for two different bias currents − 10 μA (−217 mV) and −20 μA (−274 mV) showing both Hanle (out-of-plane) and inverted Hanle (in-plane) effects. Measurements were performed at 10 K. Black solid lines in (a) are Lorentzian fits. ((c) and (d)) Comparison between experimental (open symbols) and calculated (solid lines) spin signals for in-plane and out-of-plane configurations at −10 μA and −20 μA. Data were normalized to the maximum value.
(Color online). ((a) and (b)) Bias dependence of the spin signal and of the HWHM at 10 K for both in-plane and out-of-plane geometries. The inset in (a) shows the bias dependence of the spin resistance-area product Rs × A in kΩ. μm2. Dashed lines are guides for the eye. (c) Temperature dependence of inverted Hanle effect for two different bias currents −10 μA (−217 mV) and −20 μA (−274 mV). Spin signal is still observable at 220 K. The inset shows the inverted Hanle signal measured for a bias current of−20 μA (−274 mV) at various temperatures. (d) Temperature dependence of the HWHM of Hanle curves for −10 μA (−217 mV) and −20μA (−274 mV) bias currents.
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